<i>n</i>-Type narrow band gap A₃InAs₃ (A = Sr and Eu) Zintl phase semiconductors for optoelectronic and thermoelectric applications

Narrow-Gap Semiconductors and Low-Dimensional Structures for Optoelectronic Applications

Advances in the growth, analysis, and characterization of various narrow-gap semiconductors and low-dimensional opto-electronic device structures have brought revolution into the modern day's information and communication technology including optical communication and computing systems. The main objective of this special issue is to include the recent advances in the experimental and theoretica...

Inter-band Tunnel Transistor Architecture using Narrow Gap Semiconductors

The inter-band tunnel transistor (TFET) architecture features a subkT/q sub-threshold slope operation and can potentially support high ION/IOFF ratios over small gate voltages. Based on twodimensional numerical simulations, we investigate TFET in various material systems ranging from silicon to indium arsenide. TFET performance can be enhanced when heterojunctions are employed at the source sid...

Er- and Eu-doped GaP-oxide porous composites for optoelectronic applications

Zintl phases for thermoelectric devices.

By converting waste heat into electricity and improving the efficiency of refrigeration systems, thermoelectric devices could play a significant role in solving today's energy problems. Increasing the thermoelectric efficiency (as measured by the thermoelectric material's figure-of-merit, zT) is critical to the development of this technology. Complex Zintl phases, in particular, make ideal cand...

the investigation of the relationship between type a and type b personalities and quality of translation

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